Device Structure ◆ CMOS image sensor 9 j& i! `" M+ k# Z: M& G
◆ Image size4 p2 J$ q" b. R
Type 1/2.8 1 Q# f$ d) p& s! N) U: N
◆ Total number of pixels
* G& t5 o' v1 ^) H! L& ^* f. O8 X) y1945 (H) × 1109 (V) approx. 2.16 M pixels
! Z+ t% n! D+ {: G# G( ^◆ Number of effective pixels % B# u& z; e* j& h3 i
1945 (H) × 1097 (V) approx. 2.13 M pixels ' N: S5 k" j! }0 T; N, |, H. _
◆ Number of active pixels 6 a4 S2 r" A8 Y9 ]& M! h) X& k) c
1937 (H) × 1097 (V) approx. 2.12 M pixels 2 m/ w- m$ @( ]+ t+ l2 }
◆ Number of recommended recording pixels + P, X0 \5 S9 W) g0 y+ k
1920 (H) × 1080 (V) approx. 2.07 M pixels
, N' K7 D- F$ @* T" O+ N( D) ]◆ Unit cell size , b4 _) |! h( Y- T6 Z
2.9 µm (H) × 2.9 µm (V) + B: ^! M0 {0 I& c
◆ Optical black
( w I% \; A+ y, QHorizontal (H) direction: Front 0 pixels, rear 0 pixels Vertical (V) direction: Front 10 pixels, rear 0 pixels ) c7 J# t2 }! h, w1 _
◆ Dummy * A7 i0 f1 T. Q6 d* z1 F3 {
Horizontal (H) direction: Front 0 pixels, rear 3 pixels Vertical (V) direction: Front 0 pixels, rear 0 pixels
! @* [0 u! M- o; i1 |3 L' C. E◆ Substrate material . a. F3 s+ A. b. o
Silicon1 a2 W, m/ F0 ^
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|Shenzhen Lianshi Electronics Co., Ltd
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发表于 2022-3-30 14:18:23