Device Structure ◆ CMOS image sensor / |& o: s+ `) V# u6 U/ I/ p; s$ q
◆ Image size
1 E2 T! n: I9 u( K Type 1/2.8
/ K+ Z$ |6 \& H! |1 O) }% U◆ Total number of pixels
; L' x! t# ^* O! p) S1945 (H) × 1109 (V) approx. 2.16 M pixels
$ m9 h6 Z% ]. [; M$ v" A/ z* W◆ Number of effective pixels / G! H1 i5 O% [% x
1945 (H) × 1097 (V) approx. 2.13 M pixels $ ]6 R6 {, p( `3 H* K* O5 Z
◆ Number of active pixels + f2 i7 E* f3 `% ?- p/ ~
1937 (H) × 1097 (V) approx. 2.12 M pixels
" \: T! A5 d8 \% l9 N' N◆ Number of recommended recording pixels ; y+ n$ I, l( R# S' o+ }( A
1920 (H) × 1080 (V) approx. 2.07 M pixels
7 ~2 o6 K0 {; K; B◆ Unit cell size , B* L$ i8 s- x$ r5 l! `
2.9 µm (H) × 2.9 µm (V)
0 B0 E1 ]) N5 z- O" Q◆ Optical black $ M2 Y& m! \' ?. v! O
Horizontal (H) direction: Front 0 pixels, rear 0 pixels Vertical (V) direction: Front 10 pixels, rear 0 pixels
) Y" O, g$ q% M' W◆ Dummy
7 W$ R3 {, V% f2 A8 G4 oHorizontal (H) direction: Front 0 pixels, rear 3 pixels Vertical (V) direction: Front 0 pixels, rear 0 pixels
1 E. R. _, `$ U& N4 @◆ Substrate material 3 X7 E" A5 }, Q. k2 V2 X& _
Silicon
! d) f1 t! u/ g( `' n+ n |
|Shenzhen Losoeo Electronics Co., Ltd.
发表于 2022-3-30 14:18:23