CMOS image sensor # f. Y; s, {4 {1 ?6 R, J' |$ A
◆ Image size Type 1/2.8
8 S4 N) ] Z4 \/ W% `" Z g◆ Total number of pixels 2704 (H) × 2104 (V) approx. 5.69 M pixels
5 l+ Z% l' ~3 W! a! v7 g' M( ~# [◆ Number of effective pixels 2616 (H) × 1964 (V) approx. 5.14 M pixels
& e' }" ]# I1 C$ A◆ Number of active pixels 2608 (H) × 1960 (V) approx. 5.11 M pixels ( c2 `. L" c0 @ O- X5 z: P$ A
◆ Number of recommended recording pixels 2592 (H) × 1944 (V) approx. 5.04 M pixels
' n' t; I& X- M0 h1 e0 H) r: M◆ Unit cell size 2.0 µm (H) × 2.0 µm (V)
6 l5 C4 k" Y& l" u8 }+ i◆ Optical black Horizontal (H) direction: Front 0 pixels, rear 0 pixels Vertical (V) direction: Front 13 pixels, rear 0 pixels
3 F1 r( @' X. i1 \: ~# n' q* [◆ Dummy Horizontal (H) direction: Front 0 pixels, rear 0 pixels Vertical (V) direction: Front 0 pixels, rear 0 pixels
; Q1 Y. g8 h* U: B% K* g, n◆ Substrate material Silicon |
|Shenzhen Lianshi Electronics Co., Ltd
( 粤ICP备13003189号 )
发表于 2022-3-29 20:53:01