Sony索尼IMX179QQ芯片规格参数规格书

. X. K+ m% V. O$ @+ @, {. bDescription
The IMX179 is a diagonal 5.7 mm (Type 1/3.2) CMOS active pixel type image sensor with a square pixel array and
- J# h0 @% [" o* G2 ]# W) ]; R8.08M effective pixels. This chip operates with three power supplies, analogue 2.7 V, digital 1.2 V, and IF 1.8 V, and
has low power consumption. High sensitivity, low dark current, and no smear are achieved through the adoption of R,
5 X3 k  v3 M- o& OG, and B primary color pigment mosaic filters. This chip features an electronic shutter with variable charge-storage
time.
5 B) Y/ R, ^, ?In addition, this product is designed for use in cellular phone and tablet PC. When using this for another application,
$ L8 p; L. Q" Q: ^7 r& gSony does not guarantee the quality and reliability of product.
Therefore, don’t use this for applications other than cellular phone and tablet PC. Consult your Sony sales
representative if you have any questions.
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Features
+ E9 I/ s" y1 O. B0 I+ ^ ◆CMOS active pixel type dots
5 d1 E  c8 V; h/ a) k: {' D◆2-wire serial communication circuit on chip
5 I9 k; L6 S' I- R/ i1 i◆CSI2 serial data output
◆Timing generator, H and V driver circuits on chip
◆CDS/PGA on chip
; P" C$ c1 s* n4 V) s◆10-bit A/D converter on chip
8 Q0 |$ m  v# ^6 p3 Y8 |◆Automatic optical black (OB) clamp circuit on chip
◆PLL on chip (rectangular wave/sine wave)
◆High sensitivity, low dark current, no smear
◆Excellent anti-blooming characteristics
7 Y& T9 D2 X% d◆Variable-speed shutter function (1H units)
◆R, G, B primary color pigment mosaic filters on chip
& N% W% m- \/ U6 Q# H◆Max. 30 frame/s in all-pixel scan mode
◆Pixel rate: >260 MHz (>30 frame/s at All-pixel mode)

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" W4 P8 ^# |- I3 W# nDevice Structure
◆CMOS image sensor
◆Image size
, ?4 r( j" _/ f+ u: Diagonal 5.7 mm (Type 1/3.2)
$ S/ i! M0 j$ P◆Total number of pixels
: 3288 (H) × 2512 (V) approx. 8.26M pixels
◆Number of effective pixels
: 3280 (H) × 2464 (V) approx. 8.08M pixels
◆Chip size
, G( z. n6 f9 g, l7 D7 x! h: 6.18 mm (H) × 5.85 mm (V)
; q: \' H* g/ ^◆Unit cell size
% Y1 @: d  X3 n& D2 o9 r5 A( Z: 1.4µm (H) × 1.4µm (V)
◆Substrate material
) V: `) g. O/ c: Silicon

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