Device Structure ◆ CMOS image sensor + j, V3 U: }$ _
◆ Image size
5 R5 u0 N8 [: g9 F+ ~ Type 1/2.8 4 U( ^8 r7 R9 Y
◆ Total number of pixels
" v5 V/ N* z' w8 T+ R5 q: M: P9 n# f1945 (H) × 1109 (V) approx. 2.16 M pixels 3 w1 z+ ^ B) y* w
◆ Number of effective pixels
2 h! N- ]1 @7 @, N: @1945 (H) × 1097 (V) approx. 2.13 M pixels
- A- Q2 J0 i8 m9 a' R: i◆ Number of active pixels 7 l( [9 ?+ p' a% J8 X. X! I3 @' W
1937 (H) × 1097 (V) approx. 2.12 M pixels 7 }6 [7 w. ]; q/ |' J5 S
◆ Number of recommended recording pixels
6 c0 q! W0 z, ]0 R6 \3 H1920 (H) × 1080 (V) approx. 2.07 M pixels . G" j) ]( C: _, C; ]2 Q
◆ Unit cell size r& \ F% ^, t3 w
2.9 µm (H) × 2.9 µm (V)
k3 Y. {) T( u5 m: W/ b◆ Optical black $ ?0 I7 |( w( m) N+ f
Horizontal (H) direction: Front 0 pixels, rear 0 pixels Vertical (V) direction: Front 10 pixels, rear 0 pixels $ s1 @$ p' o- t% @( p( u0 X& h1 d
◆ Dummy
) E6 X" ?" g% A C1 w4 l6 ?8 THorizontal (H) direction: Front 0 pixels, rear 3 pixels Vertical (V) direction: Front 0 pixels, rear 0 pixels , @+ e5 ~$ s8 O) N
◆ Substrate material ! K. U( m; x' Z/ W7 k H0 Y
Silicon4 [8 I6 P# B) j' q8 q1 U$ s, o
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|Shenzhen Lianshi Electronics Co., Ltd
( 粤ICP备13003189号 )
发表于 2022-3-30 14:18:23