Device Structure ◆ CMOS image sensor 1 t4 u6 }/ s8 g
◆ Image size
' {( l7 n: }" n; @7 P, s: M Type 1/2.8
* W( X U9 o6 l; X◆ Total number of pixels 5 f) V9 @$ |- P
1945 (H) × 1109 (V) approx. 2.16 M pixels
1 s- X: F' W# i7 _7 N' b0 A; d◆ Number of effective pixels
; J4 ?% {$ B' H! T# {- ^$ q1945 (H) × 1097 (V) approx. 2.13 M pixels
# i: S7 Y% u! n ]6 A) ?◆ Number of active pixels
, a/ p) d: \" z2 I% _$ M1937 (H) × 1097 (V) approx. 2.12 M pixels ( W- v6 W8 o- ?9 }) L! _
◆ Number of recommended recording pixels " `3 L& Y u/ @7 U$ a$ S, O8 c6 m
1920 (H) × 1080 (V) approx. 2.07 M pixels
. L" ^8 f8 l$ h/ R◆ Unit cell size 7 W- T2 y8 a+ `) o; Y T0 M) X
2.9 µm (H) × 2.9 µm (V) ' @. q. v8 d" Q+ `; O+ w8 x6 h
◆ Optical black & K2 l, t$ m" v, i {
Horizontal (H) direction: Front 0 pixels, rear 0 pixels Vertical (V) direction: Front 10 pixels, rear 0 pixels
) I l l# K7 ^2 @! b% D◆ Dummy
9 H; V, b+ q, bHorizontal (H) direction: Front 0 pixels, rear 3 pixels Vertical (V) direction: Front 0 pixels, rear 0 pixels
2 o @4 C) O: Z e0 b6 y8 k+ N g% ]◆ Substrate material
" g, @7 F8 p5 z+ v) jSilicon+ q! {% A& g( L; `7 ]( g% |
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|Shenzhen Lianshi Electronics Co., Ltd
( 粤ICP备13003189号 )
发表于 2022-3-30 14:18:23