Device Structure ◆ CMOS image sensor
3 x0 I+ d5 S; h$ _( B5 ?, C' n◆ Image size
+ y: ^% k; \* N, h. o5 } a Type 1/2.8
: y `% f8 j0 g- g+ ?- [◆ Total number of pixels & V: u/ Q5 {9 o, ~1 L6 ?
1945 (H) × 1109 (V) approx. 2.16 M pixels + N- }! \: m! U! i# M
◆ Number of effective pixels ; Q' L$ ]! U3 x& C _+ |
1945 (H) × 1097 (V) approx. 2.13 M pixels
4 H2 z) F& G) d# v2 G5 R◆ Number of active pixels
, B& J) E9 g2 p8 q9 y1937 (H) × 1097 (V) approx. 2.12 M pixels + `7 y! q! X# G6 a. W0 x
◆ Number of recommended recording pixels
8 {5 k' ?2 k# D& ~* M7 ^0 d1920 (H) × 1080 (V) approx. 2.07 M pixels ) ?; u2 G ^& Q9 Z; Q
◆ Unit cell size
' C4 s1 |! U# `8 N2.9 µm (H) × 2.9 µm (V) , ]9 O) ~: K: {
◆ Optical black 6 r( v5 I/ y. N1 ~: D" g1 p* E% [
Horizontal (H) direction: Front 0 pixels, rear 0 pixels Vertical (V) direction: Front 10 pixels, rear 0 pixels . u9 P, t$ d# E1 Q* n! ]
◆ Dummy
7 L. c, n9 I" G. n. t7 CHorizontal (H) direction: Front 0 pixels, rear 3 pixels Vertical (V) direction: Front 0 pixels, rear 0 pixels + E! H. Z% H* N' n
◆ Substrate material
# }; `$ B7 R+ B" Y6 LSilicon
; M) ~- Y2 L X/ N6 C |
|Shenzhen Lianshi Electronics Co., Ltd
( 粤ICP备13003189号 )
发表于 2022-3-30 14:18:23