Device Structure ◆ CMOS image sensor : b5 W! ~1 z6 R: c# H
◆ Image size
2 C) K& K* y. y$ T* B Type 1/2.8
n0 J6 D/ C+ N- o) k7 }◆ Total number of pixels
/ P" J4 t# a! J; t5 c1945 (H) × 1109 (V) approx. 2.16 M pixels / B5 G* f, x5 ?5 \3 M3 s* I9 Z" _, V
◆ Number of effective pixels
% R5 [( ]2 H7 U1945 (H) × 1097 (V) approx. 2.13 M pixels
* K' ~9 r ~' ^% q: |5 X z◆ Number of active pixels , N ?8 p0 }& U- p8 C( ^
1937 (H) × 1097 (V) approx. 2.12 M pixels
$ K- X+ }" v6 U5 i◆ Number of recommended recording pixels
$ ~% V% j2 L& K1920 (H) × 1080 (V) approx. 2.07 M pixels
( b& ?. ?+ H6 v% t4 D◆ Unit cell size
$ O1 T) a7 F& v1 s7 G2.9 µm (H) × 2.9 µm (V)
7 Z4 ~5 {3 y* F5 x◆ Optical black 7 |; v& g! g1 H, t0 D% q3 X2 ~/ _
Horizontal (H) direction: Front 0 pixels, rear 0 pixels Vertical (V) direction: Front 10 pixels, rear 0 pixels
' U3 ?3 {3 Z W7 Z# K$ }* t◆ Dummy 0 A4 n+ u% u( l0 ~# R
Horizontal (H) direction: Front 0 pixels, rear 3 pixels Vertical (V) direction: Front 0 pixels, rear 0 pixels
& ~3 [+ L; \7 x t1 Z7 v$ t" b◆ Substrate material
) K- H- e: R# VSilicon; ]0 ^4 S* |3 R+ T$ _
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|Shenzhen Lianshi Electronics Co., Ltd
( 粤ICP备13003189号 )
发表于 2022-3-30 14:18:23