CMOS image sensor
5 x- m: {: e. m0 D0 k5 i◆ Image size Type 1/2.8
' r7 |- R. d* [5 I4 k◆ Total number of pixels 2704 (H) × 2104 (V) approx. 5.69 M pixels 7 [4 k7 v4 h1 B- k
◆ Number of effective pixels 2616 (H) × 1964 (V) approx. 5.14 M pixels 0 G d& s' j& o
◆ Number of active pixels 2608 (H) × 1960 (V) approx. 5.11 M pixels # K* W% P# R, _- r" T: p
◆ Number of recommended recording pixels 2592 (H) × 1944 (V) approx. 5.04 M pixels
% A& C8 k8 m/ P7 G* d0 j◆ Unit cell size 2.0 µm (H) × 2.0 µm (V)
/ Z2 r# m, ?% ^◆ Optical black Horizontal (H) direction: Front 0 pixels, rear 0 pixels Vertical (V) direction: Front 13 pixels, rear 0 pixels + O2 n- D) V8 j/ d
◆ Dummy Horizontal (H) direction: Front 0 pixels, rear 0 pixels Vertical (V) direction: Front 0 pixels, rear 0 pixels
# E. N6 X( `+ r \5 q: u◆ Substrate material Silicon |
|Shenzhen Lianshi Electronics Co., Ltd
( 粤ICP备13003189号 )
发表于 2022-3-29 20:53:01