Device Structure ◆ CMOS image sensor ; T, {8 d) m6 l( z, \7 V% _ o
◆ Image size
3 t Z4 f) J/ l& E Type 1/2.8 8 Z9 b$ `! a+ C8 }3 @2 d$ `
◆ Total number of pixels
4 x `1 y( R1 p' ~% b. e1945 (H) × 1109 (V) approx. 2.16 M pixels ) v( S8 S7 F' }2 H5 C0 R
◆ Number of effective pixels
9 D( }5 D8 e* `' w- I: H# {5 S1945 (H) × 1097 (V) approx. 2.13 M pixels
5 @' G+ A- M" h◆ Number of active pixels ' f f0 l* ]- v2 ]& F4 f
1937 (H) × 1097 (V) approx. 2.12 M pixels $ ?8 Y% L% s- l( p6 u" F# Z
◆ Number of recommended recording pixels
: d& r& E9 ?- g0 }: E1920 (H) × 1080 (V) approx. 2.07 M pixels
; U& y: E$ e% \' |% X8 t0 V◆ Unit cell size
4 ^( B: U( N7 J9 r/ h* a( ] {2.9 µm (H) × 2.9 µm (V)
% ?$ i9 g5 ~; b) S2 ?" I◆ Optical black 2 S0 g* V! F2 ?2 ^. J4 j( P
Horizontal (H) direction: Front 0 pixels, rear 0 pixels Vertical (V) direction: Front 10 pixels, rear 0 pixels : A2 t; a* y4 A4 ^+ }$ g; ] M4 [
◆ Dummy
* s6 N$ }) Y: K' Q8 b) c5 xHorizontal (H) direction: Front 0 pixels, rear 3 pixels Vertical (V) direction: Front 0 pixels, rear 0 pixels " @ }5 F0 @; G" x: L
◆ Substrate material * ?$ Q# v* L- a2 @9 c7 u
Silicon
9 o* f) e7 s: z% L1 I; U% [. b4 G |
|Shenzhen Lianshi Electronics Co., Ltd
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发表于 2022-3-30 14:18:23