Device Structure ◆ CMOS image sensor ! Q$ ~ E8 V/ t9 z- \& r
◆ Image size8 F2 H0 s5 A1 {+ @3 V7 u- P
Type 1/2.8 8 Z; F: m9 h. |( l9 v3 A
◆ Total number of pixels
: m: I" b/ |* w. g' E1945 (H) × 1109 (V) approx. 2.16 M pixels : C. u3 U9 L+ K/ w; u, M2 W) `+ G
◆ Number of effective pixels
8 A" H9 L2 F' ^2 x% W o1945 (H) × 1097 (V) approx. 2.13 M pixels ; K& z% P! M+ ?/ C6 p; f q/ Y+ l
◆ Number of active pixels / m. `( ~) L9 j# q9 W. r2 X9 d1 v
1937 (H) × 1097 (V) approx. 2.12 M pixels 5 y/ K- z Q4 K! ]& d: n* \& `, I$ ~( y
◆ Number of recommended recording pixels
3 ^& q% w. q/ \* Z2 n f1920 (H) × 1080 (V) approx. 2.07 M pixels
) q0 {6 H! f8 G! K- x; |◆ Unit cell size
, ?' i% ~# I3 H2.9 µm (H) × 2.9 µm (V) % u1 X- ~' ?; K/ b7 g
◆ Optical black
& s5 M% V1 w& g1 n% THorizontal (H) direction: Front 0 pixels, rear 0 pixels Vertical (V) direction: Front 10 pixels, rear 0 pixels " }5 E( N& t% Q; x8 H, ^% Z: h
◆ Dummy
, b+ q7 k: F0 d' N S, I! RHorizontal (H) direction: Front 0 pixels, rear 3 pixels Vertical (V) direction: Front 0 pixels, rear 0 pixels
5 s; U' L9 d' o◆ Substrate material
% T" l# k6 J6 y$ B/ o3 [" oSilicon7 C% _5 n6 o0 [/ [" |) y* y$ s
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|Shenzhen Lianshi Electronics Co., Ltd
( 粤ICP备13003189号 )
发表于 2022-3-30 14:18:23