Device Structure ◆ CMOS image sensor 9 _" j8 X$ H& \* T" B- s
◆ Image size9 C; F. f- }9 m2 b7 Q" B6 H2 V6 Z2 G
Type 1/2.8
# [# L/ h- _6 ~5 w# C/ s◆ Total number of pixels
2 w5 U* l* F0 _1945 (H) × 1109 (V) approx. 2.16 M pixels
' o) ?1 V7 B! W5 @. j◆ Number of effective pixels % m Z' g* [* D7 j
1945 (H) × 1097 (V) approx. 2.13 M pixels ; _1 X+ c" u) v' r7 S& S
◆ Number of active pixels 3 H( ^7 B3 ~7 }' n" g
1937 (H) × 1097 (V) approx. 2.12 M pixels 7 b4 g6 V+ o1 h# W3 o9 s: R) S/ e
◆ Number of recommended recording pixels
7 ~" S) z# a* X5 O1920 (H) × 1080 (V) approx. 2.07 M pixels ' D Y( z! M% y# F0 q
◆ Unit cell size
) n7 ] r8 [* l7 T) n2.9 µm (H) × 2.9 µm (V) # _, L, }* n8 [7 i0 K$ X1 @4 r
◆ Optical black ) @: s1 }# M, Q. Z
Horizontal (H) direction: Front 0 pixels, rear 0 pixels Vertical (V) direction: Front 10 pixels, rear 0 pixels
# A# l2 Q9 v5 Y& b6 e* [◆ Dummy
; ~, `4 s; \0 vHorizontal (H) direction: Front 0 pixels, rear 3 pixels Vertical (V) direction: Front 0 pixels, rear 0 pixels + Q8 s9 ]5 n1 v. G
◆ Substrate material 2 H$ f3 _/ s l4 a; G$ Z
Silicon
! j( g9 ^1 ?+ E! F! Q: ^- Z* I |
|Shenzhen Lianshi Electronics Co., Ltd
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发表于 2022-3-30 14:18:23