Device Structure ◆ CMOS image sensor 7 J. `/ t7 Q8 D4 f r
◆ Image size
: I8 z7 m- i: Y* S9 { Type 1/2.8 3 f$ A: T+ y4 @/ _3 n( V$ C
◆ Total number of pixels y! t, v8 H7 v& V( n I2 |3 ]
1945 (H) × 1109 (V) approx. 2.16 M pixels # K2 \5 l8 _& W3 [: L
◆ Number of effective pixels
) f, k( J2 }" t1945 (H) × 1097 (V) approx. 2.13 M pixels ; w& w+ t( u5 |8 K+ t
◆ Number of active pixels ' O7 I* ^( q# i+ O% n, L0 v
1937 (H) × 1097 (V) approx. 2.12 M pixels & \1 u; O" {% F
◆ Number of recommended recording pixels
8 k0 b# O' }! D1920 (H) × 1080 (V) approx. 2.07 M pixels
" o* X- f6 f( h, y- A7 [1 E◆ Unit cell size & u% ?/ e3 m: n* ]; S# ~% w. W
2.9 µm (H) × 2.9 µm (V)
" |% C) J- s' t) f( O) y' U& z! J: Q$ G◆ Optical black
% q. J- r# @0 ?: I5 GHorizontal (H) direction: Front 0 pixels, rear 0 pixels Vertical (V) direction: Front 10 pixels, rear 0 pixels ; V7 @/ e+ m3 g1 V6 \- t
◆ Dummy
0 m- I6 C) {! h# ~! x# j& _, cHorizontal (H) direction: Front 0 pixels, rear 3 pixels Vertical (V) direction: Front 0 pixels, rear 0 pixels , [8 T8 f; }* [4 h3 k
◆ Substrate material
; x z' Y4 H0 }& Z* {. S- l& i' XSilicon' {6 z! h" Y+ t2 v' K* @
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