Device Structure ◆ CMOS image sensor 3 d: q9 V* h" y1 `/ Y1 @
◆ Image size1 A, e. v9 T: g# d2 {) }7 U
Type 1/2.8 ) e5 \, ?6 V+ s& \. S: |
◆ Total number of pixels
) ^3 `7 O+ r: q) d& S1945 (H) × 1109 (V) approx. 2.16 M pixels + L6 j2 O* H' C
◆ Number of effective pixels ' [& ]0 A* q& p
1945 (H) × 1097 (V) approx. 2.13 M pixels
: B4 R' h6 ?( P0 \, f◆ Number of active pixels 5 F3 i5 w2 w* m" K3 r! I
1937 (H) × 1097 (V) approx. 2.12 M pixels
, f+ A8 d5 _) ]# F5 k◆ Number of recommended recording pixels
- S8 z6 l/ x% U, c. E" p! d2 |1920 (H) × 1080 (V) approx. 2.07 M pixels " x0 K9 V6 t7 Y
◆ Unit cell size
5 o5 Q1 X- d' Y' o8 W2.9 µm (H) × 2.9 µm (V) : r& f3 v( u! T
◆ Optical black 8 A8 E0 H. }, A( S
Horizontal (H) direction: Front 0 pixels, rear 0 pixels Vertical (V) direction: Front 10 pixels, rear 0 pixels ) J0 R6 p7 [7 g0 L6 f, Q
◆ Dummy
5 U7 N5 O; C( w! sHorizontal (H) direction: Front 0 pixels, rear 3 pixels Vertical (V) direction: Front 0 pixels, rear 0 pixels
* ?, c' A# F( N# w2 j◆ Substrate material
: [ B5 K( ~- J: v3 W8 KSilicon5 R5 U2 F0 x' V+ Q8 ~& I
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|Shenzhen Lianshi Electronics Co., Ltd
( 粤ICP备13003189号 )
发表于 2022-3-30 14:18:23