Device Structure ◆ CMOS image sensor 5 s/ w; H9 I# _5 I( s% p# d* A
◆ Image size
5 o; A. Y" f/ y& }, X& H; p Type 1/2.8 6 Y" P" y6 J. N' H0 c
◆ Total number of pixels + A0 @" a6 ]7 Y- K/ |) G3 r
1945 (H) × 1109 (V) approx. 2.16 M pixels
& H) B8 q( s' _◆ Number of effective pixels % u }3 D) z% g2 x3 }
1945 (H) × 1097 (V) approx. 2.13 M pixels ) Y/ p: E+ i5 F# T6 a
◆ Number of active pixels
! E# N M# C* g* M [1937 (H) × 1097 (V) approx. 2.12 M pixels
( x( E* c+ P$ k. e# c' j◆ Number of recommended recording pixels % q6 _: |0 x' }: G" L- g
1920 (H) × 1080 (V) approx. 2.07 M pixels
& V" I% g9 {/ V& X; K% B◆ Unit cell size / {5 c/ s: [& E% q9 T) L9 Q2 L
2.9 µm (H) × 2.9 µm (V)
2 ~' D, _( T$ b4 H- A◆ Optical black
x J3 b% C+ s" hHorizontal (H) direction: Front 0 pixels, rear 0 pixels Vertical (V) direction: Front 10 pixels, rear 0 pixels
4 ~# A. w% k7 m◆ Dummy
% X0 s R% Q9 q) L, mHorizontal (H) direction: Front 0 pixels, rear 3 pixels Vertical (V) direction: Front 0 pixels, rear 0 pixels
1 E' B% i8 V/ Q& d5 b: M◆ Substrate material
$ a7 }+ g/ c; s9 N# oSilicon
' j8 E& d- |7 S4 [ |
|Shenzhen Losoeo Electronics Co., Ltd.
发表于 2022-3-30 14:18:23