Device Structure ◆ CMOS image sensor
5 L5 n/ ?' } d- w◆ Image size
1 n& M& C; C/ `9 |. o, y D. m Type 1/2.8
6 Q' `+ {. t0 [3 j" } }+ j◆ Total number of pixels # U& @6 ?! C% m- ?9 c
1945 (H) × 1109 (V) approx. 2.16 M pixels
* M5 m) N. N. |' e◆ Number of effective pixels
+ B9 }8 q1 ? B w1 `1945 (H) × 1097 (V) approx. 2.13 M pixels
# `/ k) s0 z/ G9 `0 |& U◆ Number of active pixels
5 }, [: T8 @" F1937 (H) × 1097 (V) approx. 2.12 M pixels
1 Q4 [4 B' D5 k& s& {1 x◆ Number of recommended recording pixels
9 ~9 ]6 h* r* S: r$ E" z4 ?1920 (H) × 1080 (V) approx. 2.07 M pixels
) F! h) k r0 f; v! T' @◆ Unit cell size
5 Z2 @+ n" y4 ]2 M# F2.9 µm (H) × 2.9 µm (V)
& ~8 P; o( M# [◆ Optical black
2 ^* ]! k, t: i u: P$ lHorizontal (H) direction: Front 0 pixels, rear 0 pixels Vertical (V) direction: Front 10 pixels, rear 0 pixels 4 I9 |6 g2 V% s p- f
◆ Dummy 6 K& B) B" m; q1 ~' o2 g# @
Horizontal (H) direction: Front 0 pixels, rear 3 pixels Vertical (V) direction: Front 0 pixels, rear 0 pixels 8 D3 B I+ O/ I4 Z- l
◆ Substrate material % P: V! c( g6 l! Z9 b
Silicon4 Y0 U- H" y3 E% U
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