Device Structure ◆ CMOS image sensor " [! J) `+ I, Y- ?7 ^9 |( N
◆ Image size# o0 f7 _: ^/ Z7 ?) Z/ J3 T$ e
Type 1/2.8 m' s! I! ^6 Y; n
◆ Total number of pixels n. ?7 L; [! y Y; r. J
1945 (H) × 1109 (V) approx. 2.16 M pixels ! ]1 r5 ?* H$ t. A9 A
◆ Number of effective pixels
2 i" ` v" T6 Y1945 (H) × 1097 (V) approx. 2.13 M pixels + [' H. W e6 w* U' I
◆ Number of active pixels + T5 |5 n1 q7 j. e9 w6 t0 ^: z
1937 (H) × 1097 (V) approx. 2.12 M pixels
( V- K" `' x! u: k9 M◆ Number of recommended recording pixels
" j `& W: |1 u& d4 m5 U1920 (H) × 1080 (V) approx. 2.07 M pixels
5 Z" J5 P$ m$ p/ b& X( `◆ Unit cell size # z1 _0 r6 c2 L7 |1 L& g+ h
2.9 µm (H) × 2.9 µm (V)
9 v: ]7 L+ j# u9 `6 X◆ Optical black
) _, w* G, I- x: m( i1 oHorizontal (H) direction: Front 0 pixels, rear 0 pixels Vertical (V) direction: Front 10 pixels, rear 0 pixels 8 O H3 U! _4 z) O* F. D
◆ Dummy
; Z5 i# H7 _7 S h: y' GHorizontal (H) direction: Front 0 pixels, rear 3 pixels Vertical (V) direction: Front 0 pixels, rear 0 pixels ) A6 l- c9 m$ q5 ^ y: r
◆ Substrate material
& |$ ]% n, I A( dSilicon9 t, e: {6 y* _+ v u! U% b, m* A. F7 \
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|Shenzhen Lianshi Electronics Co., Ltd
( 粤ICP备13003189号 )
发表于 2022-3-30 14:18:23