Device Structure ◆ CMOS image sensor 8 y0 j6 B) K" N" f1 {
◆ Image size
5 u) M ?# p \: V3 @- y* C Type 1/2.8 % A2 U$ i4 |8 [$ A' V; d. D$ x
◆ Total number of pixels
* s/ @1 i8 A# s( J1945 (H) × 1109 (V) approx. 2.16 M pixels & D" w7 ?6 x, D
◆ Number of effective pixels 5 d$ D) e& H, @
1945 (H) × 1097 (V) approx. 2.13 M pixels
& D \, b5 E, R2 z◆ Number of active pixels
O+ g5 s/ x1 H4 @+ c- S1937 (H) × 1097 (V) approx. 2.12 M pixels
5 {- a0 `6 T# l0 c◆ Number of recommended recording pixels 3 _ e$ Q5 K* `- i9 j
1920 (H) × 1080 (V) approx. 2.07 M pixels u) J. ~5 k; u `
◆ Unit cell size 4 `- K# c/ i2 r l
2.9 µm (H) × 2.9 µm (V)
' u& _) F: b0 [) X) c1 \◆ Optical black
6 a7 S' @& A ~2 e& fHorizontal (H) direction: Front 0 pixels, rear 0 pixels Vertical (V) direction: Front 10 pixels, rear 0 pixels
* z" t$ v" U1 F5 z$ E1 w◆ Dummy
& Q* m( k+ `' e+ h/ V8 A2 s7 N$ MHorizontal (H) direction: Front 0 pixels, rear 3 pixels Vertical (V) direction: Front 0 pixels, rear 0 pixels
a. z/ |4 x: ?- X Q1 r: r◆ Substrate material
3 z/ G1 V! M- |/ q4 [; {Silicon0 t! `/ X7 g8 `
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|Shenzhen Lianshi Electronics Co., Ltd
( 粤ICP备13003189号 )
发表于 2022-3-30 14:18:23